Some application notes are listed by topics. Check also in the download center some review papers. 
Thin film measurement consists mainly in getting the Optical index, film thickness, thin film porosity.
If a material or topic is not listed please contact us, we may have the data..

From polymers to Polysilicon for TFT, thru the ITO contact layer, the Spectroscopic Ellipsometer systems must provide large spectral range for measurement including NIR for ITO contactless resisitivity measurement, all in one measure with small spot size.

Poly -Si (pdf , 419.65 Kb)
SiNx and a-Si by IRSE (pdf , 295.29 Kb)

Spectroscopic Ellipsometry (SE) has been a success in the silicon industry. 
Depending material, SE configuration is is different. The usage of shorter or longer wavelength as well as proper incident angle can make a big difference in the capability to measure the material. Below some Application Notes (AN). 
The use of deep UV, FTIR SE and combination of GES5E and Grazing X Ray are pointed out in the following application notes as well as some Ellipsometry Porosimetry datas.

Young Modulus of Porous Low K (pdf , 665.5 Kb)
TiN ARC (pdf , 235.87 Kb)
SiGe Thickness and composition by SE (pdf , 293.66 Kb)
Porosity characterization of Low K (pdf , 558.17 Kb)
ONO stack (pdf , 239.2 Kb)
IRSE-IC dopants (pdf , 272.44 Kb)
BST by DUV (pdf , 247.21 Kb)

High K New dielectrics with higher dielectric constant are replacing the silicon oxide as gate dielectric in the electronic devices. Most of the time, no single technique will be able to provide all the characteristics and therefore the combined effort by complementary techniques is necessary. Results of measurements combining DUV ellipsometry and X Ray Reflectometry are shownas well as low k pore sealing using EP.

EP-pore sealing (pdf , 590.95 Kb)
High K Hf02 Al2O3 using GES5E GXR (pdf , 477.87 Kb)
Young Modulus of Porous Low K (pdf , 665.5 Kb)

Langmuir Blodget films have been intensively studied. The use of fast CCD based SE allowed also to have real time monitoring of SAM and ALD layers. More recently NanoBio technology have brougt new materials like DNA, Carbone Nanotube on gold surfaces but also functionnalisation of surfaces. Our SE systems can be equiped with Liquid cells, cryostat, heating stage, environnemental cells... One example shown here is the use of EPA to measure self organised surfaces of TiO2.

Dye solar cell by EPA (pdf , 1.12 Mb)

From the LED made of III-V to the OLED based on organics and most of the time grown on transparent flexible substrates, the need for new development in the tool and software has been very strong. Today we can show results where we can measure thru the cap, from the back side of encapsulated layers, thank to proprietary optical design and patented software. The quality of the measurements allows to precisley determine n and K values of these news materials and thus simulate the optimized structure for best optical emission.

OLED by GES5E and environemental (pdf , 2.06 Mb)

The optimisation of solar cells and caracterisation of the advanced materials involved bring new challenges compares to traditionnal Si Solar cell including material aging studies.

Dye Solar Cell by EPA (pdf , 1.12 Mb)
Polymer solar cell Modelling (pdf , 357.72 Kb)
Si and Organic based Solar Cells (pdf , 1.95 Mb)

Several laboratories are investigating the possibilities of high-volume, low-cost production of PV cells based on organic polymer systems. A growing number of organic semi-conductors are now known, and PV devices may be constructed by sandwiching one of these between two metals with suitable work functions, or by making organic p-n junctions similar to those of inorganic PV cells. A major challenge in this work is that the electronic states in organic materials are much more localized than in inorganic semiconductors. . The Solar Cell AN show various example of measurement of polymer solar cells.
Solar cell AN

OLED by GES5E and environmental (pdf , 2.06 Mb)
Anisotropy of polymer (pdf , 533.05 Kb)

Combination of Specrtroscopic Ellipsometry (SE) and Photometry on the same platform is a great advantage to characterize coating used in Photolithography. Our SE tool can be configured to cover from 135 nm as starting wavelength or 186nm up to 33 µm.

SiON by GES5E DUV (pdf , 326.49 Kb)
SiON ARC by GES5E PUV (pdf , 284.99 Kb)
BARC TARC by GES5E DUV (pdf , 365.09 Kb)

The use of waveguide made of thick dielectrics increased the need for automatic multiangle measurement and wavelenght extension as described in the two AN on optical waveguides. In the dielectric stacks AN we described the capability to measure SiO2 and TaO2 or TiO2 ARC stacks thanks to NIR extension.

Optical Waveguide_2 (pdf , 209.94 Kb)
Optical Waveguide_1 (pdf , 211.42 Kb)
Inhomogeneous Dielectric Film TiO2 (pdf , 233.92 Kb)
Dielectric Stack_2 (pdf , 216.22 Kb)
Dielectric Stack_1 (pdf , 1.17 Mb)

Precise control of deposited films as well as the trend to have thinner films using specific deposition mode like ALD, increase the use of In-Situ measurements. Thanks to multichannel detection and using high speed data transfert early stage of reactions can be followed using Real time SE.

New concepts involve higly porous materials where Ellipsometry Porosimetry can be used for example.

Research on nanopore materials shows potential for industrial photocatalysis applications (pdf , 85.16 Kb)
Solid Oxide Fuel Cell by EPA (pdf , 1.26 Mb)